IRFPE50 DATASHEET PDF

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The Field-Effect Transistor FET is a transistor that uses an electric field to control the shape and hence the conductivity of a channel of one type of charge carrier in a semiconductor material.

FETs are unipolar transistors as they involve single-carrier-type operation. Because these two terminals are normally connected to each other short-circuited internally, only three terminals appear in electrical diagrams.

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IRFPE50 NTE Equivalent NTE POWER MOSFET N-CHANN – Wholesale Electronics

The MOSFET is by far the most common transistor in both digital and dataasheet circuits, though the bipolar junction transistor was at one time much more common. Compared to the other power semiconductor devices, for example IGBT, Thyristor, its main advantages are high commutation speed and good efficiency at low voltages.

It shares with the IGBT an isolated gate that makes it easy to drive.

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IRFPE50 데이터시트(PDF) – International Rectifier

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Power MOSFET

Drain – Source Voltage Vdss. Gate threshold voltage Vgs th.

Drain-Source resistance Rds-on max. Screw M3 PJP 0.

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